Ohmic contacts to n-type germanium with low specific contact resistivity

Low resistivity Hf/Al/Ni/Au Ohmic Contact Scheme to n-Type GaN

The electrical and structural properties of Hf/Al/Ni/Au (20/100/25/50 nm) ohmic contact to n-GaN are reported in this study. Specific contact resistivities of Hf/Al/Ni/Au based contacts have been investigated as a function of annealing temperature and achieve the lowest value of 1.09×10 Ω·cm after annealing at 650 C in vacuum. A detailed mechanism of ohmic contact formation is discussed. By usi...

Specific contact resistance measurements of ohmic contacts to semiconducting diamond

A simplified version of the specific contact resistance measurement scheme of G. K. Reeves [Solid State Electronics 23, 487 (1980)] has been developed. Its applicability to semiconducting diamond is demonstrated using four sample types: epitaxial films doped to mid 1019 acceptors/cm3 on (100) and (110) type IIa substrates; type IIb diamonds 0.25 mm thick, and type IIb diamonds thinned to 0.035-...

Fermi level depinning and contact resistivity reduction using a reduced titania interlayer in n-silicon metal-insulator-semiconductor ohmic contacts

Low Resistance Ohmic Contacts to p-Ge C on Si

We report on ohmic contact measurements of Al, Au, and W metallizations to p-type epitaxial Ge0:9983C0:0017 grown on a (100) Si substrate by molecular beam epitaxy (MBE). Contacts were annealed at various temperatures, and values of specific contact resistance have been achieved which range from 10 5 cm2 to as low as 5:6 10 6 cm2. Theoretical calculations of the contact resistance of metals on ...

Ultra low-resistance palladium silicide Ohmic contacts to lightly doped n- InGaAs

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